Eg for silicon is 1.12 eV and germanium is 0.72 eV.
It can be concluded that
A. Less number of electron hole pairs will be generated in silicon than in germanium at room temperature
B. More number of electrons and hole pairs will be generated in silicon than in germanium at room temperature
C. High energy of charges is a property of silicon
D. The relationship of the two is not significant
Share your understanding of this question with the correct explanation.