A microwave diode in which the carriers that transverse the drift region are generated by minority carrier injection from a forward-biased junction instead of being extracted from the plasma of an avalanche region ___

A microwave diode in which the carriers that transverse the drift region are generated by minority carrier injection from a forward-biased junction instead of being extracted from the plasma of an avalanche region.

A. IMPATT
B. TRAPAT
C. BARITT diode
D. Esaki diode

Show Answer

Answer: C

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